Two HFUT Alumni—Professor Chen Weijiang and Professor Liu Ming, have been elected as Members of the Chinese Academy of Sciences (CAS), according to the notice released by CAS on December 7, 2015.

Chen Weijiang, graduated from HFUT in 1982, is now a chief scientist for 973 Program (National Program on Key Basic Research Project), Deputy Director of AC Construction State Grid Corporation of China (SGCC), PhD supervisor and Senior Engineer (Professor). He has been dedicated to studies on electro-magnetic transient analysis, thunder and lightning prevention, insulation coordination, advanced power transmission technology and so on.

Professor Chen has made a major contribution to the development of monitoring, simulation and differentiated protection for lightning strike. The methods and models he proposed, as well as the serial protection devices he developed, have been widely applied in the power grid. He has been involved in the research and engineering practices on ultra-high voltage power transmission and presided over the launch of Wuhan High Voltage Research Institute in Central China. He was also a chief scientist in a 973 Program—“Fundamental Research on Magnetic and Insulation Properties of Ultra-high voltage AC/DC power transmission”.

Chen is also the Chairman of High Voltage Study Committee under the Chinese Society for Electrical Engineering (CSEE) and President of IEEE Ultra High Voltage Working Group. He has published over 80 academic papers, 23 patents and won National Award for Technological Invention twice.

Professor Liu Ming, graduated from HFUT in 1985, is now Assistant Director at Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Director of Lab of Nanofabrication and Novel Device Integration Technology and a PhD supervisor.

She has won 6 state and provincial awards and 2 National Awards for Technological Invention. She is also Standing Member of MEMS & NEMS Society of China, CIS, Member of academic committee of Key Lab of semiconductor material, CAS and Member of academic committee of Nano Physics and Devices Lab, Institute of Physics, CAS.

She has taken part in many 973 and 863 Programs (State High-Tech Development Plan). She is the first one to fabricate a 256-bits organic memory by soft x-ray lithography and has been focusing on Nano-Floating Gate in transforming to nonvolatile memory.

Written by He Yuexin & Zhang Fayu

Edited by Liu Hongping